摘要
ＡＩＮ陶瓷具有高的热导率和与Ｓｉ相接近的热膨胀系数以及电绝缘特性，是一种应用前景极好的基片材料。本文介绍了ＡＩＮ陶瓷的基本特征、用于陶瓷基片和封装材料的工艺难点及ＡｌＮ陶瓷的应用现状和前景。
AlN has been recongnized as one of most promising electronic packaging materials because of its unique combination of properties, such as high thermal conductivity, CTE closely matching Si , and good electrical insula-ting property. In this paper the basic properties of AIN ceramic,probiems in using AIN ceramic and its applications in the present and in the future are de-scribed.
出处
《半导体情报》
1995年第1期42-52,共11页
Semiconductor Information
关键词
陶瓷
基片
封装
氮化铝
AIN ceramic, Metallization, Substrates,Sintering, Grain boundary phase
