摘要
本文对用液相外延技术制作半导体激光器时所遇到的非平面ＩｎＰ固－液相界及在不同平面上满足不同的界面反应速度情况做了严格的理论分析，它可以对实际非平面ＩｎＰ生长所遇到的各种情况给出准确的解释．此外，对理论结果进行了数值模拟计算，对界面反应速度作适当拟合之后，得到了与实验一致的结果，从而验证了理论的正确性，可以其作为实际非平面ＩｎＰ液相外延生长时工艺设计与参数选择的依据．
Abstract Theoretical analyses of growing processes have been made in the case of various curved InP surfaces with different reaction speed used in the development of semiconductor laser diodes by liquid phase epitaxy (LPE).They may perfectly explain some phenomena in experiments of LPE on curved InP surfaces.The numerical calculation has also been made and is consistent with the experimental results after surface reaction speed K is well imitated. Then the validity of the theory is proven and the results can be practically used as the basis of techonological design and parameter selection in the LPE on curved InP surface.
