摘要
在７１—１６３Ｋ的不同稳定温度下，对ＧａＡｓ－Ａｌ０．３Ｇａ０．７Ａｓ调制掺杂异质结构界面的光激发过剩电子的浓度，作了１０－５－１０３秒时间范围的瞬变测量．一个包含了热声子辅助隧穿，Ｓｉ掺杂的ＡｌｘＧａ１－ｘＡｓ层ＤＸ中心俘获势垒分布和隧穿后电子的能量弛豫过程的理论计算可以定量地解释实验结果．
Abstract We report transient measurements on photo-induced excess electrons on the interface of a selectively doped GaAs-AlxGa1-xAs heterostructure with temperatures ranging from 71. 5K to 163K and a time window of 10-5-103 seconds. A theoretical calculation of the transient curves based on thermal phonon assisted tunneling, capture barrier distribution of the DX center in Si-doped AlxGa1-xAs layer, and the relaxation of the tunneling electrons agrees quantitatively with the experimental results.
