摘要
从晶格匹配及能带阶跃角度讨论了设计一个 n沟 Si/Si1-x Gex HEMT异质结层的原理及方法 ,对 K.Ismail器件进行了分析和计算 ,所得 2 DEG的 ns与实验结果基本相符 ,并利用该设计理论对 K. Ismail器件的异质结结构进行了优化改进 ,提高了器件 2 DEG的 ns。
The principle and method of designing n Si/Si 1- x Ge x HEMT heterojunction from the lattice match and the energy band discontinuity points has discussed in this paper,the HEMT repor ted by K.Ismail has analysed,and obtained 2DEG density n s essentially according with the experiment data,final the design of the heterojunction of K.Ismails HEMT is improved to get a higher 2DEG density n s.
出处
《半导体情报》
2001年第2期46-49,共4页
Semiconductor Information
