摘要
MOS管或 IC在辐照以前 ,使其在较长时间内 (约 2 0 0 h)处于一定的高温 (1 2 0°C)下并加偏压。这一作用会改变器件对电离辐射的响应。器件会产生更大的 N管阈值电压漂移 ,IC会产生更大的漏电流 (一个量级以上 ) ,减小器件的时间参数退化。Burn- in效应具有很重要的辐射加固方面的意义 :1 )不考虑这个因素会过高估计器件的时间参数的衰退 ,从而淘汰掉一些可用的器件 ;2 )对
WT5”BZ]The exposure of MOS transistors or IC’s to a high temperature (about 120 °C) for one week or longer with a bias voltage, which is called burn in, before radiation will change the response of devices to ionizing radiation The radiation effects of the burn in device differ from those of the non burn in device For NMOS devices, greater threshold voltage drift will occur, and for IC’s, more leakage current and less time degradation can be induced Research of burn in effects is very significant for radiation hardness: 1) neglection of these effects will lead to overestimation of the time degradation of IC’s, causing some possibly usable devices to be discarded; 2) underestimation of the static leakage current of IC’s will make the device fail in advance [WT5HZ]
出处
《微电子学》
CAS
CSCD
北大核心
2001年第2期135-137,共3页
Microelectronics
