摘要
先采用0.3 mol/L草酸溶液在0°C、8.9 mA/cm2下对纯铝板进行二次阳极氧化,制得氧化铝多孔膜(AAO),随后以AAO为模板,采用直流电沉积法制得Bi2Te3纳米线阵列。镀液组成和工艺条件为:Bi3+0.007 5 mol/L,2HTeO+0.001 25 mol/L,3NO-1 mol/L,温度0°C,pH 0.1,时间2 h。研究了沉积电位对沉积过程的电流变化以及纳米线的Te含量、形貌和结构的影响,得到最佳沉积电位为1.4 V。在1.4 V下沉积所得纳米线结构致密、连续,孔径约为90 nm,与AAO的孔径一致。
Porous anodic alumina oxide （AAO） film was obtained by two-step anodization of pure aluminum plate in 0.3 mol/L oxalic acid solution at 0 ℃ and 8.9 mA/dm^2, and then used as a template to prepare BiETe3 nanowire array by direct current deposition. The plating bath composition and process conditions are as follows： Bi3＋ 0.007 5 mol/L, HTeO2＋ 0.001 25 mol/L, NO3- 1 mol/L, temperature 0 ℃, pH 0.1, and time 2 h. The effects of deposition potential on the current variation during electrodeposition, as well as the Te content, morphology, and structure of nanowire were studied. The optimal deposition potential is determined as 1.4 V. The nanowire deposited at 1.4 V is compactly and continuously structured, with an aperture of ca.90 nm which is the same as that of AAO film.
出处
《电镀与涂饰》
CAS
CSCD
北大核心
2014年第12期495-498,共4页
Electroplating & Finishing
关键词
碲化铋
直流电沉积
纳米线阵列
多孔阳极氧化铝膜
模板
bismuth telluride
direct current deposition
nanowire array
porous anodic alumina oxide film
template
