摘要
基于建立的不同工艺尺寸的CMOS器件模型,利用TCAD器件模拟的方法,针对不同工艺CMOS器件,开展了不同工艺尺寸CMOS器件单粒子闩锁效应(SEL)的研究。研究表明,器件工艺尺寸越大,SEL效应越敏感。结合单粒子闩锁效应触发机制,提出了保护带、保护环两种器件级抗SEL加固设计方法,并通过TCAD仿真和重离子试验验证防护效果,得出最优的加固防护设计。结果表明,90nm和0.13μm CMOS器件尽量选用保护带抗SEL结构,0.18μm或更大工艺尺寸CMOS器件建议选取保护环抗SEL结构。
Based on the designed models of 90nm,0.13μm and 0.18μm CMOS devices,the single event latch-up（SEL）effect of different sized CMOS devices have been studied by TCAD.It shows that with the increase of process dimension of the CMOS devices,the CMOS devices will be more sensitive to SEL,while they are not SEL hardened.According to the trigger mechanism of SEL effect,two SEL preventing layouts（the structures of guard band and guard ring）were designed.Finally,the two types of structures were verified with TCAD and heavy ions facilities.The results suggest that for 90nm and 0.13μm CMOS devices,the guard band structure is better,for 0.18μm CMOS device,the guard ring structure is recommended.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2014年第7期264-269,共6页
High Power Laser and Particle Beams
基金
国家自然科学基金项目(41304148)
基础科研项目(A1320110028)
中国科学院支撑技术项目(110161501038)
中国科学院知识创新工程青年基金项目(O82111A17S)
关键词
不同工艺尺寸
单粒子闩锁效应
SEL三维仿真模型
防护结构
重离子辐照
different process dimensions
single event latch-up effect
3Dsimulation model of SEL
mitigation technique
heavy-ion radiation
