摘要
采用丝网印刷工艺制备了CuO/BaCoⅡ0.02Co Ⅲ0.04Bi0.94O3共掺Ba0.5Bi0.5Fe0.9Sn0.1O3热敏厚膜,并借助X射线衍射仪、扫描电子显微镜及交流阻抗谱对厚膜的物相、形貌和电学性能进行表征分析。CuO的存在使得厚膜中的BaCoⅡ0.02Co Ⅲ0.04Bi0.94O3出现分解行为和非钙钛矿Ba-Bi氧化物的形成,厚膜主要由大量的颗粒链组成,单个颗粒链主要由Ba0.5Bi0.5Fe0.9Sn0.1O3构成的小晶粒和低熔点的BaCoⅡ0.02Co Ⅲ0.04Bi0.94O3大晶粒组成。当厚膜中CuO含量添加至10%时,可获得最低的室温电阻率;300 h 150℃下,CuO含量为4%的厚膜老化率约为2.3%。厚膜的电学性能主要来自于晶界的贡献,较低温区内晶界表现为氧空位电导,较高温区下为电子与氧空位耦合电导。
CuO and CuO / BaCo-Ⅱ0. 02CoⅢ0. 04Bi0. 94O3 co-doped Bao. 5 BiD. 5 Fe0. 9 Sn0. 1 O3 thick films were fabricated by screen-printing technology. The phases, surface topologies and electrical properties of the thick films were characterized by X-ray diffraction, scanning electronic microscopy and AC impedance analyzer. The added CuO in thick films led to the decomposition of BaCo-Ⅱ0. 02CoⅢ0. 04Bi0. 94O3 compound and then the formation of non-perovskite bismuth barium oxides. A number of particle chains were observed in the thick-film thermistors and each particle in chains was composed of fine-grain Ba0.5 Bi0.5 Fe0.9Sn0.1O3 and BaCo0.02ⅡCo0.04ⅢBi0.94O3 with low melting. A lowest value of room-temperature resistivity was coarse-grain BaCo0. 92 Ⅱ Co0. 04ⅢBi0. 94O3 obtained for the thick-film composition containing 10% CuO. The resistivity drift of 2.3% with duration time about 300 h at aging temperature 150℃ was observed for the film containing 4% CuO. The electrical properties of thick films were mainly attributed to the contribution of grain boundaries which showed the oxygen-vacancy conduction in low measured temperature range, and electron and oxygen vacancy coupling conduction in high measured temperature region.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2014年第5期1199-1205,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(51102055)
广西自然科学基金(2011GXNSFA018028)
关键词
热敏厚膜
微结构
电学性能
thick-film thermistor
microstructure
electrical property
