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制备工艺对磁控溅射Mo-N薄膜微结构和性能的影响 被引量:2

Synthesis and Characterization of Phase Structures and Properties of Mo-N Coatings
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摘要 采用射频磁控溅射法,研究靶功率、氩氮比对Mo-N薄膜相结构、显微硬度和摩擦性能的影响。利用X射线衍射仪、纳米压痕仪、摩擦磨损测试仪和扫描电子显微镜对薄膜的成分、结构和性能进行表征。研究表明:靶功率对Mo-N薄膜相结构、硬度和摩擦性能的影响不大;随氩氮比的降低,薄膜相结构由单一的立方γ-Mo2N转变为立方γ-Mo2N与六方δ-MoN两相共存,硬度发生大幅下降,薄膜平均摩擦系数升高。 The Mo-N coatings were deposited by RC multi-target reactive magnetron sputtering on substrates of silicon and stainless steel. The impacts of the synthesis conditions,such as the sputtering power,pressure,and ratio of N2 and Ar flow rates,on quality of the films were evaluated. The microstructures,phase structures,and mechanical properties of the Mo-N coatings were characterized with X-ray diffraction and conventional mechanical probes. The results show that the ratio of N2 and Ar flow rates has a major impact on the phase structures,hardness,and tribological property of the Mo-N coating. For example,as the ratio decreased,the dominant cubic γ-Mo2N phase of the Mo-N coatings was found to partly turn into hexagonal δ-MoN phase,accompanied by a sharp increase of the average friction coefficient and a drastic reduction of micro-hardness.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2014年第5期469-472,共4页 Chinese Journal of Vacuum Science and Technology
基金 国家自然科学基金资助项目(51074080) 江苏省自然科学基金资助项目(BK2008240) 江苏省研究生科技创新计划资助项目(CXZZ12-0717)
关键词 磁控溅射 Mo-N薄膜 相结构 硬度和摩擦性能 Magnetron sputtering Mo-N coatings Phase structure Microhardness and friction
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  • 1廖波,王静静,陆姗姗,严辉,王波.Influence of the Plasma State on the Formation of Nano Crystalline SiC Films[J].Journal of Beijing Institute of Technology,2004,13(2):123-126. 被引量:1
  • 2刘技文,李娟,赵燕平,李延辉,李昌龄,许京军.SiC纳米晶薄膜的制备及发光性质研究[J].光电子.激光,2005,16(3):274-278. 被引量:5
  • 3卢柯.纳米晶体材料的研究进展[J].中国科学基金,1994,8(4):245-251. 被引量:14
  • 4Trindade T, O' Brien P, Pickett N L, et al. Nanocrystalline Semiconductors: Synthesis, Properties, and Perspectives [ J ]. Chem Mater, 2001,13 ( 11 ):3843 - 3858. 被引量:1
  • 5Bai X M,Voter A F,Hoagland R G,et al.Efficient Annealing of Radiation Damage near Grain Boundaries via Interstitial E- mission[ J]. Science, 2010,327 : 1631 - 1634. 被引量:1
  • 6Cheng Q J, Xu S, Chai J W, et al. Influence of Hydrogen Di- lution on the Growth of Nanocrystalline Silicon Carbide Films by Low-frequency Inductively Coupled Plasma Chemical Va- por Deposition[ J]. Thin Solid Films, 2008,516 (18) : 5991 - 5995. 被引量:1
  • 7Zhang Y, Varga T, lshimaru M, et al. Competing Effects of Electronic and Nuclear Energy Loss on Microstructural Evolu- tion in Ionic-Covalent Materials[ J]. Nuclear Instruments and Methods in Physics Research,2014, B327:33 - 43. 被引量:1
  • 8Ivanov A M,Strokan N B, Lebedev A A,et al. Radiation Re- sistance of Wide Gap Materialsas Exemplified by SiC Nuclear Radiation Detectors[ J]. Experimental Instnmmnts and Tech- nique,2012,82(4) : 137 - 141. 被引量:1
  • 9Kerdiles S, Rizk R, Gourbilleau F, et al. Low Temperature Direct Growth of Nanocrystaltine Silicon Carbide Films[ J]. Materials Science and Engineering, 2000, B (69 - 70) : 530 - 535. 被引量:1
  • 10Kerdiles S,Berthelot A,Rizk R,et al. Fabrication and Prop- erties of Low-Temperature ( ≤ 600℃ ) Processed n-Type Nanocrysta/line SiC/p-Type Crysta/line Si Heterojunction Diodes[ J]. Applied Physics Letters, 2002, 80(20) : 3772 - 3775. 被引量:1

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