摘要
实际纳米MOSFET电流噪声为散粒噪声和热噪声,且散粒噪声受到费米作用和库仑作用的抑制.而现有文献研究实际纳米MOSFET电流噪声时,采取了完全不考虑其散粒噪声的抑制,或者只是强调抑制的存在而并未给出具体的抑制分析.本文基于Navid模型推导了实际纳米MOSFET电流噪声,并考虑费米作用和库仑作用对散粒噪声的抑制.在此基础上,对电流噪声随沟道长度、温度、源漏电压和栅极电压的变化特性进行了分析,其变化规律与文献中已有的实验和理论变化相一致.沟道长度越短,温度越低,源漏电压越大和栅极电压越低,电流噪声主要以散粒噪声为主.
Current noise includes shot noise and thermal noise in realistic nano-MOSFETs,and shot noise can be acted by Fermi and Coulomb. Literatures either ignored shot noise suppression or only emphasized its existence without giving detailed analysis. In this paper, based on the Navid model, the expression of current noise in realistic nano-MOSFETs is derived. The model includes the suppression effects of Fermi exclusion and Coulomb interaction on shot noise. On this basis, the variations of current noise with channel length, temperature, source-drain voltage, and gate voltage are investigated. The results show that, when the channel length goes shorter or the temperature goes lower, the source-drain voltage becomes larger and the gate voltage becomes lower. The current noise is mainly shot noise.
出处
《中国科学：物理学、力学、天文学》
CSCD
北大核心
2014年第6期587-592,共6页
Scientia Sinica Physica,Mechanica & Astronomica
基金
陕西省教育厅科学研究计划(自然科学专项)(编号:2013K1115
12JK0971)
国家自然科学基金(批准号:61106062)
中央高校基本科研业务费专项资金(编号:K50511050007)
安康学院高层次人才科研专项经费科研项目(编号:AYQDZR201206)资助
