摘要
采用坩埚下降法进行了太阳能电池用砷化镓晶体的生长研究。掺杂硅含量为万分之五可使砷化镓晶体的载流子浓度达到太阳能电池使用要求。孪晶是坩埚下降法生长砷化镓晶体遇到的主要缺陷。通过调节坩埚下降速度以及优化热场环境等手段,成功的获得了一根直径2英寸、长度约140 mm、成晶率接近100%的砷化镓单晶。晶体整体平均位错密度小于1000/cm2,载流子浓度在1.4~2.1×1018/cm3之间。
The growth of GaAs crystal that for solar cell was studied by Bridgman method. The results indicate the carrier concentration would fullfill the requirement for solar cell application as the doped Si concentration is up to 0. 05%. Twinning is the major defect that often happenned during crystal growth process. GaAs crystal with 2 in × 140 mm and nearly 100% crystallization was obtained after the growth rate and thermal environment is optimized. The average etching pit density of the as-grown crystal is ＆lt; 1000 / cm2,and the carrier concentration is in the range of 1. 4-2. 1 ×1018/ cm3.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2014年第4期754-757,770,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(51002096)
姑苏昆山双创计划(ZXL2012081
KSRCA15)
江苏省技术创新项目(BC2013155)
