期刊文献+

Arbitrary Partially Entangled Three-Electron W State Concentration with Controlled-Not Gates

Arbitrary Partially Entangled Three-Electron W State Concentration with Controlled-Not Gates
下载PDF
导出
摘要 We describe an efficient entanglement concentration protocol (ECP) for an arbitrary partially entangled threeelectron W state. We show that with the help of two ancillary single electrons, the concentration task can be well completed. This ECP has several advantages: Firstly, we only require one pair of partially entangled states. Secondly, only two single electrons are used during the whole protocol. Thirdly, we do not require all the parties to participate in the whole process, and only two parties are needed to perform the operation. Fourthly, the protocol can 5e repeated to obtain a high success probability. This ECP may be useful in current quantum computation and quantum communication. We describe an efficient entanglement concentration protocol (ECP) for an arbitrary partially entangled threeelectron W state. We show that with the help of two ancillary single electrons, the concentration task can be well completed. This ECP has several advantages: Firstly, we only require one pair of partially entangled states. Secondly, only two single electrons are used during the whole protocol. Thirdly, we do not require all the parties to participate in the whole process, and only two parties are needed to perform the operation. Fourthly, the protocol can 5e repeated to obtain a high success probability. This ECP may be useful in current quantum computation and quantum communication.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2014年第5期9-12,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 11104159, 11347110 and 61201164, and the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions.
  • 相关文献

参考文献49

  • 1Bennett C H, Brassard G, Crepeau C, Jozsa R, Peres A and Wootters W K 1993 Phys. Rev. Lett. 70 1895. 被引量:1
  • 2Karlsson A and Bourennane M 1998 Phys. Rev. A 58 4394. 被引量:1
  • 3Deng F G, Li C Y, Li Y S, Zhou H Y and Wang Y 2005 Phys. Rev. A 72 022338. 被引量:1
  • 4Ekert A K 1991 Phys. Rev. Lett. 67 661. 被引量:1
  • 5Deng F G and Long G L 2003 Phys. Rev. A 68 042315. 被引量:1
  • 6Long G L and Liu X S 2002 Phys. Rev. A 65 032302. 被引量:1
  • 7Deng F G, Long G L and Liu X S 2003 Phys. Rev. A 68 042317. 被引量:1
  • 8Wang C, Deng F G, Li Y S, Liu X S and Long G L 2005 Phys. Rev. A 71 042305. 被引量:1
  • 9Gu B, Huang Y G, Fang X and Zhang C Y 2011 Chin. Phys. B 20 100309. 被引量:1
  • 10Hillery M, Buzek V and Berthiaume A 1999 Phys. Rev. A 59 1829. 被引量:1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部