摘要
首次采用扫描式光刻机开展基于101.6mm(4英寸)砷化镓晶圆的130nm光刻工艺研究,通过研究Si片与GaAs片表面状态的差异,确认基于扫描式光刻机实现GaAs晶圆130nm光刻工艺需以GaAs片为基础调整设备状态,较好地实现了GaAs晶圆130nm光刻图形。同时尝试采用不同工艺方法(蒸发Ti金属薄膜、涂覆PMGI光刻胶以及生长SiN薄膜)处理GaAs晶圆表面,有效提高了圆片焦平面参数稳定性。进一步研究了图像倾斜参数对曝光图形形貌以及线宽均匀性的影响。
This paper reports the 130 nm lithographic process on 101. 6 mm（4-inch） GaAs wafer with the scanner lithography machine in the first time. The difference of the scannerPs focal plane parameters used for GaAs wafer and Si wafer is discussed, and it is demonstrated that the focal plane parameters can be better adjusted for the GaAs wafer. Through this method, the 130 nm lines on GaAs wafer based on the scanner lithography are realized. Meanwhile, according to the differences of the optical reflection and flatness between GaAs surface and Si surface, differ- ent methods （Ti film evaporation, PMGI coating and SiN film development on the GaAs wafer） have been applied to promote the stability of the focal plane parameters, which improve the sta- bility of the lithography process. Furthermore, the influence of the key image tilt parameter Ry on the exposure features and the line uniformity is analyzed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第2期184-187,共4页
Research & Progress of SSE
基金
江苏省自然科学基金重点研究专项(BK201101)
关键词
扫描式光刻机
焦平面参数
深紫外光刻
图像倾斜参数
scanner lithography machine
focal plane parameter
deep ultraviolet lithography
image tilt parameter Ry
