摘要
制备了与AlGaN/GaN高电子迁移率晶体管栅极结构与性能等效的圆形肖特基二极管结构,测量了器件的变温电流-电压特性,研究其在正向与反向偏压条件下的载流子输运过程。结果表明:(1)正向低偏压线形区的电流主要为缺陷辅助隧穿电流,而体电阻效应显著的高偏压区,经典热发射机制占主导地位;(2)AlGaN势垒层中的极化电场对器件的反向漏电流起重要作用,载流子的主要输运过程为Frenkel-Poole发射机制。
In order to study the forward and reverse current transport mechanisms in A1GaN/ GaN high electron mobility transistors （HEMTs）, the circular Schottky diodes with equivalent structure and characteristics to A1GaN/GaN HEMTs are fabricated, and their temperature-de- pendent current-voltage characteristics are measured. The results show that.（1） The current in the forward-low-linear-bias region can be attributed to trap-assisted tunneling, and the high-for- ward-bias current with a significant series resistance effect is dominated by the thermionic-emis- sion mechanism; （2） The polarization field within the barrier layer plays an important role in determining the reverse leakage current of the diode, and the dominant carrier transport process should be Frenkel-Poole emission.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第2期106-110,共5页
Research & Progress of SSE
基金
中国博士后科学基金资助项目(2013M540437)
江苏省自然科学基金资助项目(BK2012110)
中央高校基本科研业务费专项资金资助项目(JUSRP51323B)
