1[1]Ralph Mcarthur, John Hess. Optimizing MOSFET and IGBT gate current to minimize dy/dt induced failures in SMPS circuits. Advanced Power Technology Application Note. 2001 被引量：1
2[2]Ralph Mcarthur. Making use of gate charge information in MOSFET and IGBT data sheets. Advanced Power Technology Application Note. 2001 被引量：1
3[3]Denis Grafham. Improved power MOSFETS boost efficiency in a 3.5 kW single phase PFC. Advanced Power Technology Application Note. 2001 被引量：1
4[5]Bill Andreycak. New driver ics optimize high speed power MOSFET switching characteristics. Unitrode Application Notes 被引量：1
