期刊文献+

薄膜体声波谐振器温度-频率漂移特性分析 被引量:3

Analysis of the FBAR Temperature-Frequency Drift Characteristics
下载PDF
导出
摘要 薄膜体声波谐振器(FBAR)的谐振频率会受外界环境温度的影响而产生漂移,对于FBAR滤波器而言,这种温度-频率漂移特性会导致其中心频率、插入损耗、带内纹波等性能发生变化,降低其在电学应用中的可靠性。应用ANSYS有限元分析软件,对一个典型Mo-AlN-Mo结构的FBAR进行温度-频率漂移特性的仿真,在-50^+150℃温度范围内得到其温度频率系数为-33.6×10-6/℃。通过在FBAR结构中添加一层正温度系数的补偿层,分析了补偿层厚度对FBAR温度-频率漂移特性、谐振频率和机电耦合特性的影响。设计的温度补偿FBAR其温度频率系数为0.872×10-6/℃,比未添加补偿层时有很大改善。 The resonant frequency of film bulk acoustic resonators (FBAR) drifts when the environmental tem- perature changes. This property of temperature-frequency drift will influence the center frequency, insertion loss and passband ripples of FBAR filters, reducing the reliability of its electrical application. A temperature-frequency drift simulation of a typical Mo-A1N-Mo FBAR is achieved by means of finite element analysis software ANSYS, the simulated temperature coefficient of frequency is - 33. 6 × 10-6/℃ within the temperature range of - 50 + 150 ℃. By adding a compensated layer with positive temperature coefficient in the FBAR structure, the effects of the compensated layer thickness on temperature-frequency drift, resonant frequency and electromechanical coupling are analyzed. The simulated temperature coefficient of frequency of a designed temperature compensation FBAR is 0. 872 × 10-6/℃, the property of temperature-frequency drift is effectively improved.
出处 《压电与声光》 CSCD 北大核心 2014年第2期171-175,共5页 Piezoelectrics & Acoustooptics
基金 中国工程物理研究院超精密加工技术重点实验室基金资助项目(2012CJMZZ00009) 西南科技大学制造过程测试技术省部共建教育部重点实验室开放课题基金资助项目(11ZXZK03) 西南科技大学研究生创新基金资助项目(13ycjj31 13ycjj36) 重庆大学光电技术及系统教育部重点实验室访问学者基金资助项目(2013MS04)
关键词 薄膜体声波谐振器 温度-频率漂移 温度频率系数 谐振频率 机电耦合 有限元分析 film bulk acoustic resonator (FBAR) temperature-frequency drift temperature coefficient of fre-quency (TCF) resonant frequency electromechanical coupling finite element analysis (FEA)
  • 相关文献

参考文献10

  • 1QI Mingke , ZHANG Daihua, PANG Wei. et al. High performance TD-SCDMA band-pass filter based on film bulk acoustic resonator technology [J]. Microwave Conference Proceedings. 2012: 547-549. 被引量:1
  • 2UZUNOV I.GAYDAJIEV D. YANTCHEV V. Improvement of the frequency response of FBAR filters by using parallel or series connected resonators instead of single resonators[C]/ /Tel Aviv: Microwaves. Communications. Antennas and Electronics Systems (COMCAS) .2011: 1-9. 被引量:1
  • 3刘世洁..FBAR温度传感器研究[D].浙江大学,2012:
  • 4PANG Wei. YU Hongyu.ZHANG Hao.et al. Temperature -compensated film bulk acoustic resonator above 2 GHz [J]. Electron Device Letters.2005.26(6):369- 371. 被引量:1
  • 5LARSON J D. Temperature-compensated film bulk acoustic resonator (FBAR) devices: United States, US 7408428B2[PJ. 2008-8-5. 被引量:1
  • 6PANG Wei, YU Hongyu,ZHANG Haov et al. Electrically tunable and temperature compensated FBAR [C]/ /Long Beach,CA:Microwave Symposium Digest. 2005: 1279-1282. 被引量:1
  • 7吴梦军..FBAR及其振荡器的研究[D].浙江大学,2012:
  • 8阴知见,邵天骄,温斌.氮化铝热膨胀系数及高温弹性系数的第一性原理研究[J].燕山大学学报,2013,37(1):27-33. 被引量:4
  • 9BJURSTROM J. Advanced thin film electroacoustic devices[D]. Uppsala , Uppsala University, 2007: 11- 17. 被引量:1
  • 10LAKIN K M.MCCARRON K T.MCDONALD J F. Temperature compensated bulk acoustic thin film resonators [C]//San Juan, Puerto Rico: Ultrasonics Symposium, 2000,1: 855-858. 被引量:1

二级参考文献25

  • 1Christensen N E, Gorczyca I. Calculated structural phase transitions of aluminum nitride under pressure [J]. Physical Review B, 1993,47 (8): 4307-4314. 被引量:1
  • 2Siwiec J, Sokolowska A, Olszyna A, et al.. Photoluminescence properties ofnanocrystal line, wide band gap nitrides (C3N4, BN, AIN, GaN) [J]. Nanostruetured Materials, 1998,10 (4): 625-634. 被引量:1
  • 3Cao Y G, Chen X L, Lan Y C, et al.. Blue emission and Raman scattering spectrum from AlN nanocrystalline powders [J]. Journal of Crystal Growth, 2000,213 (1/2): 198-202. 被引量:1
  • 4Krnel K, Tomaz K. Protect ion of AlN powder against hydrolysis using aluminum dihydrogen phosphate [J]. Journal of the European Ceramic Society, 2001,21 (10/11): 2075-2079. 被引量:1
  • 5Tilo P D, Thomas N, Andreas N P. The properties of aluminum oxide and nitride films prepared by d. c. sputter deposition from metallic targets [J]. Surface and Coatings, 2003,163-164: 164-168. 被引量:1
  • 6Slack G A, Bartram S F. Thermal expansion of some diamond like crystals [J]. Journal ofApplied Physics, 1975,46 (1): 89-98. 被引量:1
  • 7Goldberg Y. Properties of advanced semiconductormaterials GaN, AlN, InN, BN, SiC, SiGe [M]. New York: John Wiley & Sons Inc, 2001: 31-47. 被引量:1
  • 8Figge S, Kroncke H, Hommel D, et al.. Temperature dependence of the thermal expansion of AlN[J].Applied Physics Letter,2009,94 (10): 101915-101917. 被引量:1
  • 9Reeber R R, Wang K. High temperature elastic constant prediction of some group III-nitrides [J]. MRS Internet Journal of Nitride Semiconductor Research, 2001,6 (3): 1-5. 被引量:1
  • 10Benkabou F, Certier M, Aourag H. Elastic properties of zinc- blende GaN, AlN and InN from molecular dynamics [J]. Molecular simulation, 2003,29 (3): 201-209. 被引量:1

共引文献3

同被引文献23

  • 1石莎莉,陈大鹏,丁德勇,欧毅,景玉鹏,董立军,叶甜春.MEMS器件牺牲层腐蚀释放技术研究[J].微细加工技术,2006(6):58-62. 被引量:6
  • 2TANIGUCHI S, YOKOYAMA T, IWAKI M, et al. An air gap type FBAR filter fabricated using a thin sacrificed layer on a flat substrate[C]//S, l. :IEEE Ul- trasonics Symposium, 2007 : 600-603. 被引量:1
  • 3SHAO I.,PALANIAPAN M. Effect of etch holes on quality factor of bulk-mode micromechanical resonators [J]. Electronics Letters, 2008, 44(15):938 940. 被引量:1
  • 4EATON W P,SMITH J H. Release-etch modeling for complex surface micromachined structures[C]//S. 1. : Micromachined Devices and Components, Proceedings of SPIE, 1996,2882 : 1-13. 被引量:1
  • 5Campanella H,Plaza J A,Montserrat J,et al.Highfrequency sensor technologies for inertial force detection based on thin-film bulk acoustic wave resonators(FBAR)[J].Microelectronic Engineering,2009,86(4-6):1254-1257. 被引量:1
  • 6Rai Shailesh,Su Ying,Dobos A,et al.A 1.5GHz CMOS/FBAR frequency reference with±10ppm temperature stability[C]//Proceedings of the 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time forum,2009:385-387. 被引量:1
  • 7Chuang W H,Luger T,Fettig R K.Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures[J].Journal of Microelectromechanical Systems,2004,13(5):870-879. 被引量:1
  • 8Lakin K M.Modeling of thin film resonators and filer[J].MTT-S International Microwave Symposium Digest,1992(1):149-152. 被引量:1
  • 9Lepkowski S P,Majewski J A,Jurczak G.Nonlinear elasticity in III-N compounds:Ab initio calculations[J].Physical Review B,2005,72(24):245201-1-12. 被引量:1
  • 10JONHSTON M L,KYMISSIS I,SHEPARD K L.FBAR-COMS oscillator array for mass-sensing applications[J].IEEE Sensors Journal,2010,10(6):1042-1047. 被引量:1

引证文献3

二级引证文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部