摘要
由载流子输运理论推出a-Si∶H/c-Si异质结太阳电池的背接触势垒是其J-V曲线出现S-shape现象的原因之一,此时电池内部存在两个串联反偏的二极管,阻碍载流子输运。通过模拟计算验证该结论,发现硅基异质结太阳电池背接触产生的肖特基势垒高度存在最大临界值,高于此值则电池的开路电压、填充因子和转换效率会急剧衰减,而短路电流密度基本不变。
Back contact barrier of the a-Si： H/c-Si heterojunction solar cell will cause its J-V curve S- shape. This can be obtained with carrier transportation theory. There formed two reverse biased diodes within the solar cells which impeded carrier transportation. This conclusion is verified by numerical simulation and found that the Schottky barrier height of the back contact exist a critical maximum value. Above this critical value, both open circuit voltage and fill factor of the solar cells degenerate significantly, while the short circuit current density has not aPParently changes.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2014年第2期275-279,共5页
Journal of Synthetic Crystals
基金
国家重点基础研究发展计划(973计划)(2012CB934201)
国家高技术研究发展计划(863计划)(2011AA050513)
中央高校基本科研业务费专项资金(65012001)
关键词
异质结
太阳电池
背接触
模拟计算
heterojunction
solar cell
back contact
numerical simulation
