期刊文献+

基于传输线CMOS肖特基二极管W波段混频器

A schottky barrier diode mixer at W waveband based on transmission line
下载PDF
导出
摘要 采用130 nm CMOS工艺,设计一种工作频率在94 GHz的高频无源混频器.该混频器为单平衡式结构,主要采用具有良好高频特性的肖特基势垒二极管与互补型传导传输线(CCS-TL)来实现.电路主要分为三部分:环形波导耦合器(Rat-race coupler),反向并联二极管对,低通滤波器.输入本振信号频率94 GHz,射频信号频率94.1 GHz,输出中频信号频率100 MHz.在电路直流偏置电压为0.5 V,本振信号PLO=0 dBm时,混频器的变频损耗为17 dB,P_(LO)=10 dBm,变频损耗为14.6 dB.经测试LO端口与RF端口的回波损耗分别为-13.4 dB,-16.7 dB,LO与RF的隔离度为26.2 dB. A 94 GHz passive single-balanced mixer was designed in 130 nm CMOS process.The circuit based on Schottky barrier diode and complementary conducting strip transmission line(CCS TL) includes three parts:rat-race coupler,APDP and low pass filter.This mixer is designed to operate at an LO signal of 94 GHz,an RF signal of 94.1 GHz,and IF signal frequency of 100 MHz.Results of simulation showed that the proposed circuit achieved a conversion loss of 17 dB with local -oscillator power of 0 dBm and a Conversion Loss of 14.6 dB with local-oscillator power of 10 dBm.The test date showed that the return loss of LO port and RF Port is-13.4 dB,-16.7 dB,respectively.LO to RF Isolation is 26.2 dB.
出处 《天津理工大学学报》 2014年第1期11-14,46,共5页 Journal of Tianjin University of Technology
关键词 肖特基势垒二极管 互补型传导传输线 高频 无源混频器 变频损耗 schottky barrier diode complementary conducting strip transmission line (CCS TL) high frequency passive mixer conversion loss
  • 相关文献

参考文献11

  • 1Cowley M, Sorensen H O. Quantitative comparison of sol- id-state microwave detectors [ J ]. IEEE Transactions on Microwave Theory and Techniques, 1966,14 ( 12 ) : 588- 602 . 被引量:1
  • 2Messenger G C, McCoy C T. Theory and operation of crystal diodes as mixers[ J]. Proceeding of The Ire, 1957, 45 (9) : 1269-1283. 被引量:1
  • 3Stephen A. Maas. Microwave mixers, 2nd revised edition [M]. MA Artech House,Inc 1986. 被引量:1
  • 4Ruonan Han, Yarning Zhang. A 280-GHz schottky diode detector in 130-nm digital cMOS [ J ]. IEEE JSSC,2011,46 ( 11 ) :2602-2612. 被引量:1
  • 5Eric Chan. Design of a 5-6 GHz Single Balanced Schottky Diode Mixer[ C ]//Asia- Pacific Conference on Applied Electromagnetics. Shah Alam, Malaysia: IEEE, 2003. 被引量:1
  • 6Hsien - Shun Wu, Ching - Kuang Tzuang, et al. Design of synthetic TEM Transmission Line for CMOS Compact Inte- grated Circuit[ J]. IEEE Transactions on Microwave Theo- ry and Techniques,2007,55 (12) : 2512- 2520 . 被引量:1
  • 7Yuh - Jing Hwang, Huei Wang, et al. A 78 - 114 GHz Monolithic Subharmonically Pumped GaAs - Based HEMT Diode Mixer[ J ]. IEEE Microwave and Wireless Compo- nents Letter, 2002,12 (6) : 209- 211. 被引量:1
  • 8Dong-Sik Ko, Mun-Kyo, Lee Dan An, et al. 94GHz sin- gle-balanced diode mixer for FMCW radar applications [ C ]//Asia-Pacific Microwave Conference. Bangkok : IEEE, 2007. 被引量:1
  • 9M F Lei, Pei Si Wu, Huang T W. Design and analysis of a miniature W-band MMIC subharmonically pumped resis- tive mixer[ C]//MTF-S International Microwave Symposi- um Digest. Dallas: IEEE, 2004. 被引量:1
  • 10Yuh Jing Hwang, Chih Chiang Han, Yau-De Huang. A Photonic-tunable cryogenically cooled w-band subharmoni- cally pumped GaAs HEMT diode mixer module [ C ]//Eu- ropean Microwave Integrated Circuits Conference. Rome: IEEE, 2009. 被引量:1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部