期刊文献+

三相逆变器中绝缘栅双极型晶体管模块结温仿真评估 被引量:5

The junction temperature simulation assessment model of IGBT module in three-phase inverters
下载PDF
导出
摘要 绝缘栅双极型晶体管(IGBT)模块的工作性能和可靠性以及逆变器中IGBT模块散热系统的设计等均与其工作结温直接相关,掌握器件的结温状况对于确保其安全可靠的使用和冷却装置的合理选择具有重要意义。推导获得基于数学方法的IGBT模块损耗模型和实现热电模拟的Foster热网络模型,基于此在MATLAB/Simulink中建立了简单实用的三相逆变器中IGBT模块结温仿真评估模型,同半导体器件制造商软件计算方法相比,加入了热电耦合因素,可以更真实地模拟器件芯片结温状况,并分析了不同负载工况下IGBT模块结温的变化趋势,所得结论可以为逆变器中IGBT模块的结温控制方法服务。 Insulated gate bipolar transistor (IGBT)power module operating performance and reliability and its design of heat dissipation system in inverter are directly related to its operation junction temperature. Investigation of temperature of power device j unction is significant to ensure its safe operation and choose cooling apparatus rationally.A loss model based on mathematical methods and Foster thermal network model are derived to achieve thermo-electronic analogy.Then,a practical junction temperature simulation model of IGBT module for the three-phase inverter is established in MATLAB/Simulink.The simulation result is more accurate than device manufacture software which doesn’t consider electro-thermal couple. Under different load conditions,the trend of IGBT module temperature change can be used to control junction temperature variation.
出处 《重庆大学学报(自然科学版)》 EI CAS CSCD 北大核心 2014年第2期37-45,共9页 Journal of Chongqing University
基金 科技部国际合作项目(2010DFA72250) 国家自然科学基金资助项目(51077137) 国家自然科学基金重点项目(51137006) 输配电装备及系统安全与新技术国家重点实验室重点项目资助(2007DA10512711101) 中央高校基本科研业务费资助(CDJZR11150013)
关键词 绝缘栅双极型晶体管 三相逆变器 损耗 热网络 热电耦合 结温仿真 IGBT three-phase inverter losses Foster thermal network electro-thermal couple j unction temperature simulation
  • 相关文献

参考文献5

二级参考文献58

共引文献315

同被引文献81

  • 1王双红,冯菁.IGBT的并联运行分析[J].电工技术,2002(8):22-23. 被引量:1
  • 2SCHEUERMANN U, HECHT U. Power cycling lifetime of advanced power modules for different temperature swings [C] //PCIM Nrnberg. 2002: 59-64. 被引量:1
  • 3HELD M, JACOB P, NICOLETrl G, et al. Fast power cycling test for IGBT modules in traction application [C] // Proc. Power Electronics and Drive Systems. 1997: 425- 430. 被引量:1
  • 4BAYERER R, HERMANN T, LICHT T, et al. Model for power cycling lifetime of IGBT modules various factors influencing lifetime [ C] //Proc. of the 5th International Conference on Integrated Power Electronics Systems (CIPS), Nuremberg, Germany, 2008. 被引量:1
  • 5RALF Schmidt, FELIX Zeyss, UWE Scheuermann. Impact of absolute junction temperature on power cycling lifetime [C] //Power Electronics and Applications (EPE) , 2013 15th Europen Conference. 2013. 被引量:1
  • 6Zhou Z,Kanniche M S,Butcup S G,et al.High-speed Electro-thermal Simulation Model of Inverter Power Modules for Hybrid Vehicles[J].IET Electric Power Applications,2011,5(8):636-643. 被引量:1
  • 7Hefner A R.Analytical Modeling of Device-circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)[J].IEEE Transactions on Industry Applications,1990,26:995-1005. 被引量:1
  • 8Hefner A R.A Dynamic Electro-thermal Model for the IGBT[J].IEEE Transactions on Industry Applications,1994,30(2):394-405. 被引量:1
  • 9Rajapakse A D,Gole A M,Wilson P L.Electromagnetic Transient Simulation Models for Accurate Representation of Switching Losses and Thermal Performance in Power Electronic Systems[J].IEEE Transactions on Power Delivery,2005,20 (1):319-327. 被引量:1
  • 10Blaabjerg F,Jaeger U,Munk-Nielsen S,et al.Power Losses in PWM-VSI Inverter Using NPT or PT IGBT Devices[J].lEEE Transactions on power Elecdronics,1995,10(3):358-367. 被引量:1

引证文献5

二级引证文献34

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部