摘要
基于氢化非晶硅光子工艺技术，单片集成了具有圆孔缺陷的刻蚀衍射光栅（EDG）微光谱仪，构建了一种高灵敏的折射率传感器。通过边界积分算法，精确分析了不同圆孔缺陷尺寸、缺陷位置和缺陷形状对探测灵敏度的影响。结果证明传感器的探测灵敏度和工艺容差性都随圆孔缺陷直径而改变，且能提供高传感灵敏度的共振散射缺陷往往具有相对较低的工艺容差性，在实际应用中需要根据要求对两者做折中考虑。研究结果证明圆孔缺陷位置对传感灵敏度几乎没有影响，但当圆孔缺陷更靠近输入光波导末端时可探测性更强；并且缺陷小的非正圆度对传感灵敏度的改变是可接受的。
We propose a high sensitive sensor designed by integrating circular-hole defects with an etched diffraction grating spectrometer based on hydrogenated amorphous silicon photonic platforms. The influence of the parameters of the circular-hole defects （e.g., diameter, position and noncircularity） on the sensing performance has numerically studied by using an accurate boundary integral method. Results show that there is a contradictory variable relation between the sensing sensitivity and the fabrication tolerance as the defect diameter changes （i.e., a defect with a given diameter can contribute to a high sensitivity, but at the same time results in a poor fabrication tolerance）. In addition, a larger resonant loss can be induced when the circular-hole defect is closer to the end face of the input waveguide. Meanwhile, results also indicate that a small noncircularity of the defect is acceptable for the sensing applications.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2013年第B12期140-144,共5页
Acta Optica Sinica
基金
国家自然科学基金（61007032）、教育部留学回国启动基金、深圳市战略性新兴产业发展专项资金（JCYJ20120613164406529）
关键词
集成光学
传感器
平面波导
光学折射率传感
硅纳米光子技术
integrated optics
sensors
planar waveguide
optical refractive index sensing
silicon nanophotonics
