摘要
应用光致发光 (PL )、电容 -电压 (C- V)、深能级瞬态谱 (DL TS)和光电导 (PC)技术系统研究 Al掺杂 Zn S1 - xTex 中与 Al有关的类 DX中心 .实验结果表明 ,Zn S1 - x Tex 中存在与 - 族半导体 DX中心相类似的性质 .获得与 Al有关的类 DX中心光离化能 Ei (～ 1.0 e V和 2 .0 e V)和发射势垒 Ee (0 .2 1e V和 0 .39e V) ,这表明 Zn S1 - x Tex大晶格弛豫的出现是由类
Al related DX like centers were observed in n type Al doped ZnS 1- x Te x epilayers grown by molecular beam epitaxy on GaAs substrates.The photoluminescence,capacitance voltage,deep level transient spectroscopy,and photoconductivity spectroscopy revealed that the behavior of Al donors in ZnS 1-x Te x was similar to the so called DX centers in Al x Ga 1- x As.The optical ionization energies ( E i) and emission barrier ( E e) for the observed two Al related DX like centers were determined as E i～1 0eV and ～2 0eV and E e-0 21eV and 0 39eV,respectively.It was also shown that the formation of Al related DX like centers resulted in a significantly large lattice relaxation in ZnS 1- x Te x .
基金
国家自然科学基金和香港科技大学资助项目 !合同号分别为 697760 14和 HKUST612 5 /98p&&
