摘要
实现了一种可以对于反射系数进行精确建模的半导体激光器电路模型并且与传统模型进行了比较。在ADS(Advanced Design Systems)中使用了SDD(Symbolic Defined Devices)器件实现,对于速率方程进行了变形以改进模型的收敛性,该模型可用于大信号仿真。对于不同偏置条件下的半导体激光器的反射系数进行了仿真并且和测量结果进行了对比。首次在大信号仿真中验证了改进模型的精确性。
An implementation of an improved circuit model of semiconductor lasers which can model the reflection coefficient more accurately is presented and the comparison between the improved model and the conventional counterpart is made. The SDD（Symbolic Defined Devices）component in ADS（Advanced Design Systems）is used and the transformation of the rate equations is taken to improve the convergence of the model. The reflection coefficient of the lasers is simulated with the model under different bias conditions and is compared with the experimental results. The accuracy of the improved model is first time verified in large signal simulation.
出处
《电子器件》
CAS
北大核心
2014年第1期55-58,共4页
Chinese Journal of Electron Devices
基金
supported by the State Key Laboratory of Advanced Optical Communication Systems and Networks,Shanghai Jiao Tong University,China~~
关键词
电路模型
半导体激光器
速率方程
收敛性
circuit model
semiconductor lasers
rate equations
convergence
