摘要
由于多晶体材料中晶粒取向不同，对晶粒的生长产生影响．本文以蒙特卡罗（ＭｏｎｔｅＣａｒｌｏ）方法为基础，通过对Ｐｏｔｔｓ算法的改进，建立快速的Ｐｏｔｔｓ算法，实现了对多晶材料在退火中晶粒生长过程的结构演化的计算机模拟和统计分析．与以前的模拟过程相比，计算量减少，逼真度较高．生长指数的模拟值约为１／３，与正常晶粒拓朴演化和理论分析的生长动力学相符合．
The grain growth is effected by the orientation of grains in polycrystalline materials. Based on the Monte-Carlo method and Ports algorithm, the quick Q-state Potts algorithm was presented. The computer simulation of temporal microstrutural evolution of grain growth in polycrystalline materials and statistical analysis were carried out. The numerical treatment is more simple compared with the previous models. The simulating growth exponent is about 1/3. The temporal microstructural evolution of normal grain growth accords with the growth kinetics.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第1期122-128,共7页
Journal of Inorganic Materials
关键词
退火过程
晶粒生长
显微结构
计算机模拟
蒙特卡罗方法
normal grain growth
microstructure evolution
computer simulation
Monte-Carlo method
