摘要
以CH4为气态碳源,不同组分的In基合金为衬底,用CVD法进行石墨烯生长的研究结果。用光学显微镜,拉曼光谱,场发射扫描电镜对生长的薄层进行了表征。结果显示在熔融态金属Cu-In合金上成功制备了石墨烯薄膜,"表面催化"型金属Cu的加入In使金属表面形核点增多,合金表面石墨烯的生长速度提高,但石墨烯质量下降;"溶解析出"型金属Ni与低熔点金属In组成的合金催化性能有明显的增强,在极短的时间内堆积成石墨"块";金属Sn不具备明显的催化生长石墨烯的能力,导致了Sn-In合金衬底上石墨烯的生长与纯In类似,Sn的影响作用较弱。
The graphene was grown by chemical vapor deposition, using CH4 as gaseous carbon source and In base alloys as substrate of the different components. The films were characterized by optical microscope, Raman spectroscopy and field emission scanning electron microscope. The results showed that graphene could be formed on molten Cu-In alloy, the addition of surface catalytic type metal Cu makes the metal surface nucleation point increased, leading to the decline in the quality of the graphene, with an enhanced growth rate of graphene on the alloy surface. The alloy from dissolution type metal Ni and precipitation type metal In has a stronger catalysis for the growth of graphene than In and they accumulate within a very short time into a graphite ＂blocks＂. Sn does not have significant catalysis effect for the growth of graphene, resulting in the growth of graphene on the surface of Sn-In alloy is similar to the growth on pure In surface, and the effect of Sn element is weak.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第12期2589-2594,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(61176062)
江苏优势学科建设工程项目(PAPD)
信息功能材料国家重点实验室开放课题
