摘要
为了合理地设计光学系统以整形大功率激光二极管阵列(High Diode Laser Stack)出射光束,必须准确了解HDLS的远场分布,然而对于HDLS远场分布的研究还不多。从亥姆霍兹方程出发,以激光二极管(Diode Laser)远场分布特性为基础,提出了一种新的半导体激光器阵列的远场分布模型,通过计算机仿真给出了简化DLS模型的远场光场变化图;模型还可表示不对称的双峰结构,有一定的现实意义。
In order to design optical system to collimate laser beam, its far-field distribution should be acquired exact- ly. Based on Helmholtz equation and far-field distribution characteristic of DL（ diode laser） , a new far-field expression model of DLS （ diode laser stack ） is proposed. The changing graph of far-field intensity distribution of the simplified DLS is given by simulation. The model has some practical significance because it can express asymmetrieal double- peak structure.
出处
《激光与红外》
CAS
CSCD
北大核心
2014年第1期22-24,共3页
Laser & Infrared
关键词
半导体激光器阵列
双峰结构
远场分布模型
光强分布
diode laser stack （DLS）
double-peak structure
far-field expression
intensity distribution
