摘要
本文设计并计算了整流电流为400A,耐压为2000V的半导体可控硅整流元件的各种结构、工艺参数及它们之间的相互关系,并给出了研制这种大功率半导体器件的各种最佳工艺条件。
In this paper, various structures of semiconductor siliconcontrolled rectifier components have been designed and calculated; the rectification current is 400A and breakdown voltage value is 2000V. Technical parameters and their inter-relationship are also given. Finally, the best technical conditions for the manufacture of high-power semiconductor device is told.
