摘要
本文通过对反应溅射法制备的a—si∶H/a—Ge∶H多势垒异质结电流——电压关系的测量,研究了多势垒异质结的载流子输运机理,在室温观察到了强场下通过多势垒结构的隧道电流,并检测了热电子的产生。
The carrier transport mechanisms of the heterojunction have been investigated by measuring the current-voltage (I-V) characteristic of multi-barrier heterojunctionn in the reactively sputtered a-Si :H/a-Ge: H. The tunnelling currents of the multi-barrier structure under strong field at room temperature were observed. In addition, the generation of hot electrons was detected.
