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电感耦合等离子体质谱法测定硅铁中杂质元素 被引量:7

Determination of impurity elements in ferrosilicon by inductively coupled plasma mass spectrometry
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摘要 探讨了应用电感耦合等离子体质谱(ICP-MS)法测定硅铁中B、Mg、V、Co、Cr、Ni、Cu、Mo、Sn共9种杂质元素的分析方法.为了避免Cl对待测元素的干扰,选择硝酸和氢氟酸来溶解样品,并考察了硼元素损失情况.通过对各待测元素同位素潜在干扰、试剂空白等效浓度及干扰程度的探讨,确定了测量用同位素11B、24Mg、51V、59Co、52Cr、60Ni、63Cu、98Mo、120Sn.采用基体匹配法消除基体干扰对测定元素的影响.方法用于硅铁标准物质分析,测定值与认定值符合较好,方法的检出限为0.03 μg/L(Sn)~0.45 μg/L(B),各元素测定结果的相对标准偏差(RSD)均小于10%,加标回收率为80%~110%. The analysis method of nine impurity elements including B,Mg,V,Co,Cr,Ni,Cu,Mo and Snin fcrrosilicon by inductively coupled plasma mass spectrometry (ICP-MS) was discussed.In order to avoid the interference of Cl with testing elements,the sample was dissolved using nitric acid and hydrofluoric acid.Moreover,the loss of boron was investigated.The potential interference for isotopes of testing elements,the equivalent concentration of reagent blank and the level of interference were studied.The selected isotopes for determination were 11B,24Mg,51V,59Co,52Cr,60Ni,63Cu,98 Mo and 120 Sn.The effect of matrix interference on determination elements was eliminated by matrix matching method.The proposed method was applied to the analysis of reference materials of ferrosili con.The found results were consistent with the certified values.The detection limit of method was 0.03 μg/L (Sn)-0.45 μg/L (B).The relative standard deviations (RSD) of all elements were less than 100%.The recoveries of standard addition were between 80 % and 110%.
出处 《冶金分析》 CAS CSCD 北大核心 2013年第10期64-68,共5页 Metallurgical Analysis
关键词 电感耦合等离子体质谱法 硅铁 杂质元素 inductively coupled plasma mass spectrometry ferrosilicon impurity elements
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