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有序介孔碳-壳聚糖修饰玻碳电极差分脉冲溶出伏安法测定痕量锡(Ⅱ) 被引量:1

Determination of Trace Stannum(Ⅱ) by Differential Pulse Stripping Voltammetry Using Ordered Mesoporous Carbon-Chitosan Modified Glassy Carbon Electrode
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摘要 将有序介孔碳(OMC)分散于壳聚糖(CTS)溶液,并用于修饰玻碳电极,制成有序介孔碳-壳聚糖修饰玻碳电极(OMC-CTS/GCE),用差分脉冲溶出伏安法研究锡(Ⅱ)在该电极上的溶出伏安特性。实验发现,在1.0mol/L盐酸中,锡(Ⅱ)在-1.2V处被富集在修饰电极表面,在0.0~+1.0V电位范围,以100mV/s的速率扫描,锡(Ⅱ)在+0.35V处产生一灵敏的溶出峰,峰电流与锡(Ⅱ)的浓度在5.0×10-8~1.0×10-5mol/L范围内呈良好的线性关系,检出限(S/N=3)为2.2×10-9 mol/L。方法用于合金中痕量锡(Ⅱ)的测定,结果同火焰原子吸收光谱法(FAAS)测定结果一致。 Ordered mesoporous carbon(OMC) was dispersed in chitosan(CTS) solution,and the surface of glassy carbon electrode(GCE) was modified by the obtained mixture to prepare ordered mesoporous carbon-chitosan modified glass carbon electrode(OMC-CTS/GCE). The stripping behavior of stannum(Ⅱ) at this electrode was studied by differential pulse stripping voltammetry. An improved method for the determination of trace amount of stannum( Ⅱ ) was reported by optimizing test conditions. It was found that in 1.0 mol/L HC1 solution,stannum( Ⅱ ) was accumulated on the surface of the modified electrode at -1.2 V. Furthermore,at the potential range of 0.0-+1.0 V with the scanning rate of 100 mV/s,a sensitive differential pulse stripping peak was detected at +0. 35 V(vs. SCE) by the OMC-CTS/GC electrode. The peak current showed good linear relationship with the concentration of stannum( Ⅱ) in the range of 5.0× 10-8-1.0× 10 -5 mol/L. The detection limit of stannum( Ⅱ ) was 2.2× 10 -9 mol/L (S/N=3). This method can be applied in the determination of trace amount of stannum( Ⅱ ) in alloy, and the result was consistent with that obtained from flame atomic absorption spectrometry method.
作者 齐同喜 齐蕾
出处 《分析科学学报》 CAS CSCD 北大核心 2013年第5期689-692,共4页 Journal of Analytical Science
关键词 有序介孔碳 壳聚糖 修饰玻碳电极 锡(Ⅱ) Ordered mesoporous carbon Chitosan Modified glass carbon electrode Stannum( Ⅱ )
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