摘要
多晶硅产品质量要求较高,在生产中还原炉每运行一个周期,其内表面都会残留有Si等污垢。经分析研究可采用氢氧化钠溶液作为清洗液,并根据残留物分布情况对还原炉基盘和钟罩分别采用特定的清理工艺进行处理,能够满足高纯多晶硅生产洁净要求。
The quality standards for polysilicon are very strict. However there is Si impurity left over in ev- ery run of Reactor. Through analysis, it is found out that NaOH solution can be used as cleaning solution. Based on the distribution of the impurity leftover on base plate and bell jar, specific cleaning process can be employed. This process is able to meet the cleaning requirements of high-purity polysilicon production.
出处
《云南化工》
CAS
2013年第5期77-79,共3页
Yunnan Chemical Technology
关键词
还原炉
残留物
清理工艺
多晶硅
reactor
residue
cleaning process
polysilicon
