摘要
在未掺杂和掺Fe的LEC In中用FT IR测试到VInH4 的存在。已经证实该缺陷在LEC -InP中普遍存在。经研究表明在掺Fe的InP中的VInH4 浓度比在未掺杂中的高。而在同一晶锭中其浓度分布是头部高 ,尾部低。讨论了其对未掺杂InP的电子特性和掺Fe的InP的补偿的影响 ,及其对InP热稳定性的影响。
A hydrogen indium vacancy comples V In H 4 in undoped and Fe doped liquid encapsulated Czochralski (LEC) InP is measured by infrared absorption spectroscopy. This complex is found to be a common defect in as grown LEC InP. The concentration of V In H 4 in Fe doped InP is higher than that of undoped InP. The concentration of V In H 4 is high in wafers from the top of an ingot and low from the tail of an ingot. The influence of this complex on the electrical properties of n type LEC undoped and compensation in Fe doped InP is discussed. The results reveal the influence of V In H 4 on the thermal stability of InP materials due to the fact that bond of hydrogen complex is weak and dissociates easily upon annealing.
出处
《功能材料与器件学报》
CAS
CSCD
2000年第4期316-320,共5页
Journal of Functional Materials and Devices
