摘要
摘要：采用金属有机物化学气相沉积（MOCVD）生长技术，以H：O和二乙基锌（Zn（CH2）2）为反应源，硼烷（B2H6，氢气稀释为1％）为掺杂气体，在面积为23cm×23em的普通玻璃衬底上生长ZnO：B薄膜，分析各工艺参数对薄膜光电特性的影响。结果表明：衬底温度对ZnO：B薄膜的透过率影响显著，其次是反应压力，B：H。掺杂量对透过率影响较小，但是对电阻率影响十分明显。通过优化工艺条件，在衬底温度为185℃，反应压力为0．5torr（1torr=133．3Pa），B，H。流量为4cm3／min下获得了厚度为580nm、在400～800nm光谱范围内透过率大于85％、电阻率为2．78×1013Q·cm的ZnO：B薄膜。将该ZnO：B薄膜作为背反射电极应用于大面积（23（31／1×23cm）非晶硅及硅锗太阳电池后，可使电池短路电流密度分别增加2．82和1．5mA／em。．
The boron-doped zinc oxide （ZnO：B） films were prepared on a 23 cm 23 cm glass substrate by metal organic chemical vapor deposition （MOCVD） using diethylzine （ Zn （ CH2 ） 2 ） and H20 as reactant gases and diborane （B2H6） , 1% diluted in hydrogen as the doping gas. The effects of deposition parameters （such as the substrate temperature, reaction pressure and doping concentration of B2 H6 ） on the optical and electrical properties of ZnO：B films were investigated. The results show that the transmittance of the ZnO：B films is mainly affected by the substrate temperature and reaction pressure. The B2 n6 doping concentration has a slight impact on the transmittance, but an obvious effect on the resistivity. By optimizing the deposition parameters, the thickness of 550 nm ZnO：B films with a high transmittance more than 85% in the spectral range of 400 -800 nm, and a low resistivity of 2.78 × 10-3 . cm can be obtained at substrate temperature of 185 ℃, reaction pressure of 0. 5 torr and diborane flow rate of 4 cm3/min. The ZnO：B films were applied as the back reflection electrode in a large area （23 cm × 23 cm） a-Si：H and a-Si：Ge solar cells, and the short-circuit current densities of the cells could be improved by 2.82 and 1.5 mA/em2 separately.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第11期863-868,共6页
Semiconductor Technology
关键词
ZnO∶B
金属有机物化学气相沉积(MOCVD)
背反射电极
光电特性
非晶硅太阳电池
boron-doped zinc oxide （ZnO： B ）
metal organic chemical vapor deposition（MOCVD）
back reflection electrode
photoelectric property
amorphous silicon solar cell
