摘要
异质NIPI超晶格结构的基本单元是由n型和p型的宽禁带材料薄层及插在它们中间的不掺杂窄禁带材料层组成,如nGaAlAs-不掺杂GaAs-pGaAlAs-不掺杂GaAs四层结构,其中Ⅰ代表不掺杂层。它是组分超晶格和掺杂超晶格结合,因而具有许多新的性质,例如空间电荷分离,载流子局域在未掺杂区内等。这个结构最早是由德国的Dohler等所研究。
The study on photoluminescence spectra of GaAs/GaAlAs hetero-NIPI structure is described in this paper. The influence of emission intensity on the transitions among various energy levels is reported. Dependence of emission peaks on the emission intensity is explained by the competition between the neutralization of impurities caused by the injection of photocarriers and the migration of carriers from doped layer to triangular barriers.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1991年第4期354-357,共4页
Chinese Journal of Luminescence
基金
国家自然科学基金
