摘要
以炭质水性中间相和正硅酸乙酯 (TEOS)为原料 ,由溶胶 -凝胶法分别制得二元干凝胶和气凝胶前驱体。在氩气气氛中 ,通过碳热还原分别合成了直径在纳米级的SiC晶须。利用红外光谱 ,X -射线衍射和透射电子显微镜对合成的 β SiC晶须进行了表征 ,结果表明 ,SiC晶须的生长过程为“VS”机理 ,合成温度和前驱体制备工艺对SiC晶须的性质有较大的影响。
Using aqua mesophase and tetraethoxysilane(TEOS)as starting materials,the precursors of binary xerogel and aerogel were prepared respectively by sol gel method.The SiC whiskers with diameter in nanosize were synthesized by carbothermal reduction reaction under argon atmosphere.The prepared β SiC whiskers were analysed by XRD,FT IR and TEM.The results show that the growth process of SiC whiskers can be explained as VS mechanism.The synthesis temperature and the preparing process of the precursors had obvious influence on the properties of SiC whickers.
出处
《硅酸盐通报》
CAS
CSCD
2000年第5期23-27,共5页
Bulletin of the Chinese Ceramic Society
基金
煤转化国家重点实验室基金
