摘要
在 L N中掺进 x(Mg O) =3%和 x(In2 O3) =1%、2 % ,用 Czochralski法生长 Mg∶ 1% In∶ L N和 Mg∶2 % IN∶ L N晶体。以光斑畸变法测试晶体光损伤阈值 ,通过质子交换技术 (PE)制备 L N和 Mg∶ In∶ L N晶体光波导基片 ,用全息法研究晶体波导基片的光损伤。结果表明 ,PE∶ Mg∶ 1% In∶ L N的光损伤阈值比 PE∶ L N提高 2个数量级以上 ,PE∶ Mg∶ 2 % In∶ L N的光损伤阈值比 PE∶ L N提高 3个数量级以上。
Doping x (MgO)=3% and x (In 2O 3)=1%,2% In∶LN crystal,Mg 1% In∶LN and Mg 2%∶In∶LN crystals were grown by Czochralski method.The photodamage threshold values of these crystals were measured by the facula aberration method.The LN and Mg∶In∶LN waveguide substrates were made by the proton exchange technology.The photodamage of these waveguide substrates was investigated by the holography method.The results show that the photodamage threshold value of PE∶Mg∶1% In∶LN and PE∶Mg 2%∶In∶LN is two and three orders of magnitude higher than that of PE∶LN,respectively.
出处
《压电与声光》
CSCD
北大核心
2000年第6期398-400,共3页
Piezoelectrics & Acoustooptics
基金
国家重点基础研究"九七三"资助项目!(G19990 330 )
黑龙江省教委基金资助项目
