摘要
以 Sb2 O3单施主和 Y2 O3+ Nb2 O5 双施主作为半导化元素 ,对低阻 Ba Ti O3半导体陶瓷的 PTCR特性进行了研究 ,通过不同的掺杂方式及工艺得到了低电阻率 PTC陶瓷材料 ,室温电阻率ρ2 5 =4· 49Ω· cm ,温度系数 αT=6 .0 4× 10 - 2 °C- 1 ,升阻比 β=1.0× 10 3,对低阻 PTC材料进行了探讨。
The PTCR characteristic of the low resistivity Barium Titanate PTC semiconductor ceramics is studied using single donor doping Sb 2O 3 and double donor doping Y 2O 3+Nb 2O 5 as the elements of semiconduction.Using different doping methods and the process of preparation, low resistivity PTC ceramics materia is obtained with a room temperature resistivity(ρ 25 ) of 4.49 Ω·cm,temperature coefficient( α T) of 6.04×10 -2 °C -1 and a lift drag ratio( β ) of 1.0×10 3 The mechanism of low resistivity PTC material is investigated.
出处
《压电与声光》
CAS
CSCD
北大核心
2000年第6期392-393,397,共3页
Piezoelectrics & Acoustooptics
基金
国家"八六三"计划资助项目!(715 -0 0 6 -0 0 70 )
