摘要
用前驱体分解法制备纳米MoS2微粒;并且以铝片为基底,制备了MoS2/Al薄膜,对MoS2/Al薄膜的I-V性能进行了研究。结果表明:以(NH4)6Mo7O24·4H2O和(NH4)2S为原料,在60℃氨水溶液中合成了具有金属光泽的斜方晶系(NH4)2MoS4。(NH4)2MoS4在80℃水中分解4 h,制备得到粒径约100 nm^200 nm的纳米MoS2微粒,团聚严重。以热浸镀法制备的MoS2/Al涂层薄膜经过30 min、40 min、60 min退火处理的样品的I-V曲线均具有良好的半导体性能。
The precursor decomposition method was used to prepare nano MoS2 particles. At the same time, MoS2/A1 thin films were separately prepared in the aluminum substrate. And then the I-V characters of MoS2/A1 thin films were investigated. Firstly, （NH4 ）6 M07 024 . 4H20 and （NH4 ）2S were used as raw materials to synthe- size （NH4 ）2MOS4 orthorhombic crystal with metallic luster in the ammonia water at 60 ℃. （NH4 ）2 MoS4 decom- posed in 80 ℃ water for 4 hours, the nano-MoS2 particles were prepared whose sizes were between 100 nm and 200 nm. The result show that the particles reunion were severely aggomerated. I-V curves of MoS2/A1 coating films with 30 min, 40 min and 60 min of annealing treatment time with good semiconductor performance.
出处
《科学技术与工程》
北大核心
2013年第28期8467-8471,共5页
Science Technology and Engineering
