摘要
本文详细地叙述了金属/GaAs和金属/GaSb界面,在极低复盖度(亚单层至几个单层)下的费米能级位移的实验结果,并应用缺陷能级密度随金属复盖度的增加而增加的模型进行理论计算,计算结果与实验曲线相吻合。
This paper describes the experimental results of Fermi level shift at the interfaces of metal-GaAs and metal-GaSb at very low coverage of metals. By the proposed model which assumes that the defect density increases with coverage, the calculations are made in detail. Calculation curves are in good agreement with experimental curves.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1991年第1期50-54,共5页
Acta Electronica Sinica
