摘要
We aim to establish a model of the averaged hole mobility of strained Si grown on（001）,（101）,and （111） relaxed Si_（1-x）Ge_x substrates.The results obtained from our calculation show that their hole mobility values corresponding to strained Si（001）,（101） and（111） increase by at most about three,two and one times,respectively, in comparison with the unstrained Si.The results can provide a valuable reference to the understanding and design of strained Si-based device physics.
We aim to establish a model of the averaged hole mobility of strained Si grown on（001）,（101）,and （111） relaxed Si_（1-x）Ge_x substrates.The results obtained from our calculation show that their hole mobility values corresponding to strained Si（001）,（101） and（111） increase by at most about three,two and one times,respectively, in comparison with the unstrained Si.The results can provide a valuable reference to the understanding and design of strained Si-based device physics.
基金
supported by the Research Fund for the Doctoral Program of Higher Education of China(No.JY0300122503)
NLAIC Research Fund(No.P140c090303110c0904)
