期刊文献+

Spray pyrolysis of tin selenide thin-film semiconductors:the effect of selenium concentration on the properties of the thin films

Spray pyrolysis of tin selenide thin-film semiconductors:the effect of selenium concentration on the properties of the thin films
原文传递
导出
摘要 Thin films of tin selenide(Sn_xSe_y) with an atomic ratio of r =[y/x]= 0.5,1 and 1.5 were prepared on a glass substrate at T = 470℃using a spray pyrolysis technique.The initial materials for the preparation of the thin films were an alcoholic solution consisting of tin chloride(SnCl_4·5H_2O) and selenide acide(H_2SeO_3).The prepared thin films were characterized by X-ray diffraction(XRD),scanning electron microscopy,scanning tunneling microscopy,scanning helium ion microscopy,and UV-vis spectroscopy.The photoconductivity and thermoelectric effects of the Sn_xSe_ythin films were then studied.The Sn_xSe_y thin films had a polycrystalline structure with an almost uniform surface and cluster type growth.The increasing atomic ratio of r in the films,the optical gap,photosensitivity and Seebeck coefficient were changed from 1.6 to 1.37 eV,0.01 to 0.31 and -26.2 to—42.7 mV/K (at T = 350 K),respectively.In addition,the XRD patterns indicated intensity peaks in r = 1 that corresponded to the increase in the SnSe and SnSe_2 phases. Thin films of tin selenide(Sn_xSe_y) with an atomic ratio of r =[y/x]= 0.5,1 and 1.5 were prepared on a glass substrate at T = 470℃using a spray pyrolysis technique.The initial materials for the preparation of the thin films were an alcoholic solution consisting of tin chloride(SnCl_4·5H_2O) and selenide acide(H_2SeO_3).The prepared thin films were characterized by X-ray diffraction(XRD),scanning electron microscopy,scanning tunneling microscopy,scanning helium ion microscopy,and UV-vis spectroscopy.The photoconductivity and thermoelectric effects of the Sn_xSe_ythin films were then studied.The Sn_xSe_y thin films had a polycrystalline structure with an almost uniform surface and cluster type growth.The increasing atomic ratio of r in the films,the optical gap,photosensitivity and Seebeck coefficient were changed from 1.6 to 1.37 eV,0.01 to 0.31 and -26.2 to—42.7 mV/K (at T = 350 K),respectively.In addition,the XRD patterns indicated intensity peaks in r = 1 that corresponded to the increase in the SnSe and SnSe_2 phases.
机构地区 School of Physics
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第8期1-7,共7页 半导体学报(英文版)
关键词 thin film tin selenide spray pyrolysis optical band gap thin film tin selenide spray pyrolysis optical band gap
  • 相关文献

参考文献31

  • 1Pejova B, Grozdanov I. Chemical synthesis, structural and opti- cal properties of quantum sized semiconducting tin (II) selenide in thin film form. Thin Solid Films, 2007, 515:5203. 被引量:1
  • 2Singh J, Shimakawa K. Advances in amorphous semiconductors. In: Sharma D D, Cotliar G, Tokura Y, ed. Advances in Condensed Matter Series. Vol. 5. Taylor and Francis, 2003. 被引量:1
  • 3Kolobov A V. Photo-induced metastability in amorph semic. Wiley-VCH, 2003. 被引量:1
  • 4Popescu M A. Non-crystalline chalcogenides, solid state science and technology library. Vol. 8. Kluwer Academic Publishers, 2000. 被引量:1
  • 5Semiconducting chalcogenide glass I, glass formation, struc- re, and stimulated transformations in chalcogenide glasses. In: Willardson R K, Weber E R, ed. Semiconductors and Semimet- als, Treatise, vol. 78, 2004. 被引量:1
  • 6Ohlidal I, Franta D, Frumar M, et al. Influence of composition, exposure and thermal annealing of optical properties of As-S chalcogenide thin films. Adv Mater, 2004, 6:139. 被引量:1
  • 7Petkov P, Vassilev V, Petkova T, et al. Optical properties of ternary chalcogenide thin films with SnTe. Adv Mater, 2005, 7: 1965. 被引量:1
  • 8Platikanova D, Arsova D, Skordeva E, et al. Photo- and thermo- induced changes in As2S1.sSel.sGex. J Optoelectron AdvMater, 2004, 7:337. 被引量:1
  • 9Hegedus J, Kohary K, Kugler S. Light-induced volume changes in glassy selnium II. Kinetics of volume expansion. J Optoelec- tron Adv Mater, 2004, 7:2231. 被引量:1
  • 10Boolchand P. Intermediate phases, reversibility windows, stress- free and non-aging networks, and strong liquids. Chalcogenide Lett, 2006, 3:29. 被引量:1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部