摘要
近年来,与Si的CMOS工艺相兼容的Ge/Si异质结构发光器件取得很多重要的进展。本文概述了Si基Ge异质结构发光器件的最新成果,如Ge/Si量子点发光二极管、Si衬底上的Ge发光二极管及激光器和Ge/SiGe多量子阱发光二极管,分别描述了这些器件的特点和增强其发光特性的途径。最后展望了Si基Ge异质结构发光器件的发展趋势,指出尽管Si基Ge异质结构发光器件获得了很大的发展,但是器件的发光效率仍然很低,离实用还有一定距离,还需要在材料和器件的结构方面有更多的创新。
Due to the compatibility of Si-based light emitters with Si CMOS processes,Ge /Si heterostructures based light emitters have developed significantly.This paper reviews the most recent progress of this field,including Ge / Si Quantum Dot（QD） Light Emitting Diode（LED）,Ge light emitting diode on Si,Ge laser on Si,and Ge / SiGe Multiple Quantum Well（MQW） light emitting diode.It describes the characteristics of these light emitting devices and how to enhance their luminescent properties.Finally,it discusses the challenges and opportunities associated with these approaches and suggests that much innovation should be promoted in material and device structures.
出处
《中国光学》
EI
CAS
2013年第4期449-456,共8页
Chinese Optics
基金
国家重大基础研究计划(973计划)资助项目(No.2013CB632103)
国家自然科学基金资助项目(No.61036003
No.61176013
No.61177038)
