摘要
采用电化学方法在近室温条件下快速制备硅纳米线阵列.实验选用HF-AgNO3混合溶液,在单晶硅表面沉积生长一层薄的金属银的催化剂薄膜.然后在HF-Fe(NO3)3混合溶液中,利用银为催化剂,在硅片表面发生氧化还原反应,通过选择性腐蚀,制备出大面积硅纳米线阵列;利用扫描电镜分析了制备温度、时间及AgNO3的浓度对催化剂形状、大小的影响,并进一步分析了其对纳米线的定向特征、长度及填充率的影响.在本实验条件下,银催化剂的颗粒直径影响纳米线的生长,过大或过小的催化剂都不利于纳米线的制备.同时,纳米线的长度随着刻蚀生长时间的延长而增加.
Silicon nanowire arrays were fabricated at room temperature.A thin metallic catalyst film was deposited on the single-crystal silicon wafer in the HF-AgNO3 mixed solution.Then a large area of silicon nanowire arrays was selectively etched out on the surface of silicon wafer in HF-Fe（NO3）3 solution during the redox reaction processing catalyzed by silver particles.The morphology of the specimens was observed by scanning electron microscopy（SEM）.The results showed that the shape,dimension of the Ag catalyzer and the oriented property,length and filling ratio of the silicon nanowire were determined by the temperature,time and the concentration of AgNO3.It was found that uniform nano-wire array formed when using small silver catalyzers,and the length of the silicon nano-wire increased with increasing time.
出处
《河南大学学报（自然科学版）》
CAS
北大核心
2013年第4期375-379,共5页
Journal of Henan University:Natural Science
基金
国家自然科学基金资助项目(11047174)
关键词
硅
硅纳米线
电化学
催化剂
silicon
silicon nanowires
electrochemic
catalyzer
