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辉光弧光协同共放电方式制备TiN薄膜的研究 被引量:2

Study of the TiN Film Plated by Arc Discharge and Glow Cement Deposition(APSCD)
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摘要 分别采用中频磁控溅射、电弧离子镀及辉光弧光协同共放电混合镀(APSCD)三种方式在碳钢基体上制备TiN薄膜,采用原子力学显微镜、显微硬度计、台阶膜厚仪、电化学技术对薄膜表面形貌、显微硬度、膜厚、耐腐蚀性进行测试。研究结果表明:多弧离子镀薄膜颗粒的平均粗糙度为7.066 nm,混合镀薄膜颗粒的平均粗糙度为4.687 nm,在相同时间条件下,磁控溅射薄膜厚度为658 nm,混合镀膜厚度为1345 nm,混合镀工艺具有降低多弧离子镀粗糙度又可以克服磁控溅射沉积速率慢的优点。经过混合镀TiN薄膜后,基体表面显微硬度从226HV提高到1238 HV,在天然海水中测得混合镀膜层腐蚀电位比基体提高104mV。 TiN film were deposited on the carbon steel by frequency magnetron sputtering,arc ion plating,arc discharge and glow discharge cement deposition(APSCD).AFM,microscopic hardness meter,step film thickness meter and electrochemical technology were used to investigate the surface morphologies,hardness,thickness and corrosion resistance of the film.The results show that the average roughness of the film prepared by arc ion plating and APSCD is 7.066 nm and 4.687 nm respectively.The thickness of the film prepared by magnetron sputtering and APSCD is 658 nm and 1345 nm respectively in the same coating time.The average roughness of the film prepared by APSCD is decreased comparing to the average roughness by arc ion plating,and the deposition rate of APSCD is larger than the deposition rate of magnetron sputtering.The hardness of the substrate is increased from 226 HV to 1238 HV after coated TiN by APSCD and corrosion potential of the substrate in the sea water after coated by APSCD is increased 104 mV.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2013年第8期818-822,共5页 Chinese Journal of Vacuum Science and Technology
基金 黑龙江省自然科学基金项目(No.ZD201106) 深圳市科技研发资金(CYB20105270092A JSD201105300103A)
关键词 TIN薄膜 磁控溅射 多弧离子镀 腐蚀 TiN film Magnetron sputtering Arc ion plating APSCD Corrosion
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