摘要
采用金属有机化合物汽相淀积技术生长用于高亮度发光管 (UB-L ED)的 Al Ga In P/Ga As半导体微结构材料 ,突破了材料结构设计和材料生长工艺的关键技术 ,生长出满足于 Cd级的红、橙、黄光 L ED器件的外延材料。
MOCVD growth and properties of AlGaInP/GaAs micro-structure materials for high bright LED are presented.It is shown that a detailed understanding of the structure design,misoriented substrates,DBR layer,GaP window layer and dopant incorporation is necessary to obtain high performance LED.The epitaxial materials with candela class output were successfully grown for red,orange and yellow LEDs.
出处
《半导体情报》
2000年第6期50-54,共5页
Semiconductor Information
基金
国家863高技术新材料领域资助项目! (86 3- 715 - Z34- 0 3- 0 1)
