摘要
在钛电极表面上,采用电化学方法在0.1mol/L MnSO4和0.002mol/L SeO2的溶液中沉积硒化锰(MnSe)薄膜。循环伏安实验结果表明在-1.60～-1.70V电位范围易发生Mn和Se共沉积。然后采用XRD、SEM及EDS等研究沉积电位分别在-1.55、-1.60、-1.65和-1.70V时得到薄膜的特性,结果表明上述选定的电位不影响沉积层立方结构优先沿(200)晶面向;不同电位对沉积层形貌及化学计量数有显著影响。控制电位可以沉积得到不同特征的MnSe薄膜。
Thin films of manganese selenide（MnSe）were deposited on titanium substrates from an aqueous electrolytic bath consists of 0.1mol/L MnSO4and 0.002mol/L SeO2using electrodeposition technique.Cyclic voltammograms showed that co-deposition of Mn and Se is observed in the potential range from-1.65to-1.70V.Characterization of the thin films deposited respectively at-1.55,-1.60,-1.65,-1.70V were studied using XRD,SEM and EDS,and this results revealed that the cubic structure of this deposited films with preferential orientation along（200）plane is independent of this selected potentials,the morphological and stoichiometric number of this deposited films were dependent of this selected potentials.Thin films of MnSe with different properties could be deposited by the using of different potential.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2013年第11期1635-1637,1641,共4页
Journal of Functional Materials
基金
国家青年科学基金资助项目(21003163)
重庆大学大型仪器开放基金资助项目(2011063009)
关键词
MnSe
循环伏安法
恒电位
共沉积
MnSe
cyclic voltammogram
potentiostatic
co-deposition
