摘要
以微齿轮图形结构作为规整模板 ,用约束刻蚀剂层技术对GaAs样品表面进行了加工刻蚀 .在有捕捉剂H3AsO3存在的情况下 ,规则微齿轮图形能够很好地在样品表面复制 .刻蚀结果与没有捕捉剂存在时的刻蚀结果做了比较 .另外还测试了不同方法制得膜板的性能 ,初步探讨了电化学模板的制作工艺 .
Electrochemical etching of single crystal GaAs (111) was performed with a regular mold which resembles the micro_gear patterns. The etched patterns on GaAs was very consistent with the negative copies of the mold when the confined etchant layer technique (CELT) was used. However when the scavenger chemical of H 3AsO 3 was not added in the etching solution, the regular micro_gear patterns of the mold could not be obtained. In addition ,the procedure of fabricating a electrochemical mold is introduced and the characteristics of the mold are briefly discussed.
出处
《电化学》
CAS
CSCD
2000年第3期253-257,共5页
Journal of Electrochemistry
基金
国家自然科学基金!重点项目 (2 98330 70 )
国家重点基础研究发展规划项目! (G1 9990 331 0 7)
