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基于灰色理论的失效机理一致性检验方法 被引量:10

Consistency identification method of failure mechanism based on grey theory
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摘要 针对基于加速模型参数不变、基于统计方法及基于试验观察3种常见的失效机理一致性检验方法进行研究,发现3种方法均需要加速试验数据来对失效机理一致性进行检验,不能事先为加速试验提供理论指导;提出了一种基于灰色理论的失效机理一致性检验方法,该方法可用预试验数据进行失效机理一致性检验,为加速试验制定最高应力台阶提供理论指导;结合某型光电编码器预试验数据对该方法进行实例验证,得出175℃附近为失效机理变化点,并与基于统计的方法进行对比;最后,对产品进行失效机理分析,利用扫描电镜分析(SEM,Scanning Electron Microscope)结果验证该方法的正确性. A study was made on the consistency identification method of failure mechanism.Three common methods based on the acceleration model parameters unchanged,based on the statistical methods and based on the experimental observation were studied.It was found that the three methods need the accelerated test data for the consistency identification method of failure mechanism,but this could not provide theoretical guidance for the accelerated test.A consistency identification method of failure mechanism based on grey theory was put forward,which can be used for failure mechanism consistency identification by the pre-test data.Combined with the pre-test data of a certain type of photoelectric encoder,the conclusion was drawn that 175℃° was the change point of the failure mechanism using this method.It made a contrast with the method based on statistical.Finally,the failure mechanism analysis for the products was used to verify the correctness of the method.
出处 《北京航空航天大学学报》 EI CAS CSCD 北大核心 2013年第6期734-738,744,共6页 Journal of Beijing University of Aeronautics and Astronautics
关键词 灰色理论 失效机理 一致性检验方法 发光二极管 光敏三极管 grey theory failure mechanism consistency identification method light-emitting diode phototransistor
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  • 1张国军.原位反应制备TiB2-Ti(C,N)-SiC复相陶瓷的研究[M].北京:中国建筑材料科学研究院,1995.. 被引量:2
  • 2叶大论.实用无机物热力学手册[M].北京:冶金工业出版社,1981.168-197. 被引量:1
  • 3Hu J M,Barker D,Dasgupta A,et al.Role of failure-mechanism identification in accelerated testing.Proceedings Annual Reliability and Maintainability Symposium,IEEE,1992:181 被引量:1
  • 4Redhead P A.Thermal desorption of gases.Vacuum,1962,12:203 被引量:1
  • 5Pasco R W,Schwarz J A.Temperature-ramp resistance analysis to characterize electromigration.Solid-State Electron,1983,26(5):445 被引量:1
  • 6Li Zhiguo,Song Zengchao,Cheng Yaohai.A study on GaAs FET's failure mechanism and experimental technology of rapid evaluation of reliability.Proceedings of IEEE Reliability Physics International Symposium,2003:576 被引量:1
  • 7Zhang Wanrong,Li Zhiguo,Mu Fuchen.A rapid evaluation method for degradation activation energy of n-GaAs ohmic contacts with and without TIN diffusion barrier layers.Proceedings of 8th IPFA,Singapore,2001:134 被引量:1
  • 8熊惟皓,胡镇华,崔崑.Ti(C,N)基金属陶瓷中碳化物的界面行为[J].材料导报,1998,12(2):14-16. 被引量:16
  • 9张国军,王毅敏,方锐,岳雪梅,金宗哲.原位合成板晶增强复相陶瓷[J].硅酸盐学报,1998,26(1):27-32. 被引量:8
  • 10包亦望,王毅敏,金宗哲.Al_2O_3/SiC复相陶瓷的高温蠕变与持久强度[J].硅酸盐学报,2000,28(4):348-351. 被引量:8

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