摘要
基于0.35μm工艺,设计了应用于低光照环境下的低噪声、高灵敏度CMOS图像传感器。该图像传感器采用PPD 4T像素结构,像素阵列512×512,包含列级运放、水平移位寄存器、逻辑控制单元、单斜率模数转换器和偏置电路等模块。通过采用低噪声PPD 4T像素结构、低噪声列级放大器电路结构,以及对版图的优化设计等措施实现了低噪声、高灵敏度的CMOS图像传感器设计。
Based on 0.35 μm process,CMOS image sensor with low noise and high sensitivity are designed for use in low light environment.The sensor applying PPD 4T pixel with the array of 512×512,includes column amplifiers,shift register,digital controller,single slope ADC and bias circuit.By adopting the low noise structure of PPD 4T pixel and column the column-level circuit and optimal design about the layout of 4T pixel,the CMOS sensors design with low-noise and high sensitivity is realized.
出处
《半导体光电》
CAS
CSCD
北大核心
2013年第3期366-369,共4页
Semiconductor Optoelectronics
基金
中国电子科技集团公司CCD研究开发中心基金项目(6240109025)
