摘要
拉曼光谱作为一种无破坏性、快速且敏锐的测试技术已经成为表征石墨烯样品和研究其缺陷的最重要的实验手段之一.本论文用离子注入在单层和双层石墨烯中产生缺陷,并利用拉曼光谱研究了存在缺陷时单层和双层石墨烯的一阶和二阶拉曼模,单层石墨烯的D模为双峰结构,而双层石墨烯的D模具有四峰结构.同时,利用四条激光线系统地研究了本征和缺陷单层和双层石墨烯的拉曼峰频率的激发光能量依赖关系,并基于石墨材料的双共振拉曼散射机理指认了离子注入后样品各拉曼峰的物理根源.
Raman spectroscopy has become a key way for characterizing and studying disorder in graphene, due to its nondestructive, rapid and sensitive technique. In this paper, ion implantation is used to produce the structural defects in single-layer graphene （SLG） and bi-layer graphene （BLG）. The first- and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by Raman spectroscopy. The dependence of dispersive frequency of first- and second-order modes in SLG and BLG on the excitation energy was discussed in detail. Results show that the - 2450 cm-1 peak is the combination mode of the D mode at - 1350 cm-1 and the D＂ mode at - 1150 cm-1.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第13期476-482,共7页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2009CB929301)
国家自然科学基金(批准号:11225421,10934007)资助的课题~~
关键词
石墨烯
缺陷
拉曼光谱
能量色散关系
graphene, defect, Raman spectroscopy, laser-energy dispersion
