摘要
This paper reports on a successful demonstration of poly-Si TFT nonvolatile memory with a much reduced thermal-budget.The TFT uses uniform Si quantum-dots（size -10 nm and density -10-（11） cm-（-2）） as storage media,obtained via LPCVD by flashing SiH4/H2 at 580℃for 15 s on a Si3N4 surface.The poly-Si grain-enlargement step was shifted after source/drain formation.The NiSix-silicided source/drain enables a fast lateral-recrystallization,and thus grain-enlargement can be accomplished by a much reduced thermal-cycle（i.e., 550℃/4 h）.The excellent memory characteristics suggest that the proposed poly-Si TFT Si quantum-dot memory and associated processes are promising for use in wider TFT applications,such as system-on-glass.
This paper reports on a successful demonstration of poly-Si TFT nonvolatile memory with a much reduced thermal-budget.The TFT uses uniform Si quantum-dots（size -10 nm and density -10-（11） cm-（-2）） as storage media,obtained via LPCVD by flashing SiH4/H2 at 580℃for 15 s on a Si3N4 surface.The poly-Si grain-enlargement step was shifted after source/drain formation.The NiSix-silicided source/drain enables a fast lateral-recrystallization,and thus grain-enlargement can be accomplished by a much reduced thermal-cycle（i.e., 550℃/4 h）.The excellent memory characteristics suggest that the proposed poly-Si TFT Si quantum-dot memory and associated processes are promising for use in wider TFT applications,such as system-on-glass.
